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| J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number J/SST174 J/SST175 J/SST176 J/SST177 VGS(off) (V) 5 to 10 3 to 6 1 to 4 0.8 to 2.25 rDS(on) Max (W) 85 125 250 300 ID(off) Typ (pA) -10 -10 -10 -10 tON Typ (ns) 25 25 25 25 FEATURES D D D D D Low On-Resistance: J174 <85 W Fast Switching--tON: 25 ns Low Leakage: -10 pA Low Capacitance: 5 pF Low Insertion Loss BENEFITS D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-236 (SOT-23) TO-226AA (TO-92) D 1 D G 2 S S 3 2 1 3 G Top View Top View J174 J175 J176 J177 SST174 (S4)* SST175 (S5)* SST176 (S6)* SST177 (S7)* *Marking Code for TO-236 For applications information see AN104. Document Number: 70257 S-04030--Rev. E, 04-Jun-01 www.vishay.com 9-1 J/SST174/175/176/177 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST174 J/SST175 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F) IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -10 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V TA = 125_C VGS = 0 V, VDS = -0.1 V IG = -1 mA , VDS = 0 V 45 30 5 -20 10 -135 1 30 3 -7 6 -70 1 V mA 0.01 5 0.01 -0.01 -5 nA -1 -1 85 -0.7 125 W V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDS = -15 V, ID = -1 mA f = 1 kHz VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V, VGS = 0 V, f = 1 MHz VDS = 0 V, VGS = 10 V f = 1 MHz VDG = -10 V, ID = -1 mA f = 1 kHz 20 5 20 pF nV Hz 4.5 20 85 125 mS mS W Switching Turn-On Time td(on) tr Turn-Off Time td(off) tf VGS(L) = 0 V, VGS(H) = 10 V See Switching Circuit 10 15 10 20 PSCIA ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 9-2 Document Number: 70257 S-04030--Rev. E, 04-Jun-01 J/SST174/175/176/177 Series Vishay Siliconix SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST176 J/SST177 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F) IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -10 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V TA = 125_C VGS = 0 V, VDS = -0.1 V IG = -1 mA , VDS = 0 V 45 30 1 -2 4 -35 1 30 0.8 -1.5 2.25 -20 1 V mA 0.01 5 0.01 -0.01 -5 nA -1 -1 250 -0.7 300 W V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDS = -15 V, ID = -1 mA f = 1 kHz VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V, VGS = 0 V, f = 1 MHz VDS = 0 V, VGS = 10 V f = 1 MHz VDG = -10 V, ID = -1 mA f = 1 kHz 20 5 20 pF nV Hz 4.5 20 250 300 mS mS W Switching td(on) Turn-On Time tr td(off) tf VGS(L) = 0 V, VGS(H) = 10 V See Switching Circuit 10 15 10 20 PSCIA ns Turn-Off Time Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. Document Number: 70257 S-04030--Rev. E, 04-Jun-01 www.vishay.com 9-3 J/SST174/175/176/177 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 200 rDS(on) - Drain-Source On-Resistance ( ) IDSS 160 rDS 120 -60 -80 gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 15 gfs 12 gos 150 -100 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 18 gfs and gos @ VDS = -15 V VGS = 0 V, f = 1 kHz 200 g os - Output Conductance ( mS) 250 80 -40 9 100 40 rDS @ ID = -1 mA, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V -20 6 50 0 0 2 4 6 8 10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 3 0 2 4 6 8 VGS(off) - Gate-Source Cutoff Voltage (V) 0 10 Output Characteristics -25 VGS(off) = 3 V -20 I D - Drain Current (mA) 0.5 V -15 1.0 V -10 1.5 V -5 2.0 V 0 0 -4 -8 -12 -16 -20 rDS(on) - Drain-Source On-Resistance ( ) VGS = 0 V 250 On-Resistance vs. Drain Current TA = 25_C 200 VGS(off) = 1.5 V 150 3V 100 5V 50 0 -1 -10 ID - Drain Current (mA) -100 VDS - Drain-Source Voltage (V) Output Characteristics -2 VGS = 0 V rDS(on) - Drain-Source On-Resistance ( ) 1.5 V -1.6 I D - Drain Current (mA) 0.5 V 1.0 V -1.2 2.0 V -0.8 240 300 On-Resistance vs. Temperature ID = -1 mA rDS changes X 0.7%/_C 180 VGS(off) = 1.5 V 3V 120 5V -0.4 VGS(off) = 3 V 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 60 0 -55 -35 -15 5 25 45 65 85 105 125 VDS - Drain-Source Voltage (V) www.vishay.com TA - Temperature (_C) Document Number: 70257 S-04030--Rev. E, 04-Jun-01 9-4 J/SST174/175/176/177 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Turn-On Switching 50 tr approximately independent of ID VDD = -10 V, RG = 220 W VGS(H) = 10 V, VGS(L) = 0 V 40 16 5V Switching Time (ns) Switching Time (ns) 30 12 td(off) VGS(off) = 1.5 V 8 5V 4 VDD = -10 V, VGS(H) = 10 V, VGS(L) = 0 V 0 0 1 2 3 4 5 0 0 -3 -6 -9 -12 -15 20 tf VGS(off) = 1.5 V Turn-Off Switching tON @ ID = -5 mA tON @ ID = -10 mA 20 10 tr @ ID = -5 mA VGS(off) - Gate-Source Cutoff Voltage (V) ID - Drain Current (mA) Capacitance vs. Gate-Source Voltage 30 VDS = 0 V f = 1 MHz 24 I G - Gate Leakage Capacitance (pF) 100 nA 10 nA Gate Leakage Current ID = -1 mA -10 mA 1 nA TA = 125_C IGSS @ 125_C 18 Ciss 12 Crss 6 100 pA -10 mA 10 pA TA = 25_C -1 mA IGSS @ 25_C 1 pA 0 0 4 8 12 16 20 0.1 pA 0 -10 -20 -30 -40 -50 VGS - Gate-Source Voltage (V) VDG - Drain-Gate Voltage (V) Transfer Characteristics -40 VGS(off) = 3 V -32 I D - Drain Current (mA) Hz VDS = -15 V 100 Noise Voltage vs. Frequency ID = -0.1 mA en - Noise Voltage nV / -24 TA = -55_C -1 mA 10 -16 25_C -8 125_C 0 0 1 2 3 4 5 VDS = -10 V 1 10 100 1k f - Frequency (Hz) 10 k 100 k VGS - Gate-Source Voltage (V) Document Number: 70257 S-04030--Rev. E, 04-Jun-01 www.vishay.com 9-5 J/SST174/175/176/177 Series Vishay Siliconix SWITCHING TIME TEST CIRCUIT 174 VDD VGG RL* RG* ID(on) *Non-inductive -10 V 20 V 560 W 100 W -15 mA VGG VDD 175 -6 V 12 V 750 W 220 W -7 mA 176 -6 V 8V 1800 W 390 W -3 mA 177 -6 V 5V 5600 W 390 W -1 mA 51 W 1.2 kW VGS(H) RL VGS(L) 0.1 mF RG 7.5 kW 1.2 kW Sampling Scope 51 W 51 W INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF See Typical Characteristics curves for changes. www.vishay.com 9-6 Document Number: 70257 S-04030--Rev. E, 04-Jun-01 |
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